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11N50 TC74A SG2540DW ODUCT AMN12111 AD5415 IN4937GP 66G062G
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  Datasheet File OCR Text:
 TOSHIBA
Discrete Semiconductors
1SV257
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
Features * Ultra Low Series Resistance : rs = 0.2(Typ.) * Useful for Small Size Set
Unit in mm
Absolute Maximum Ratings (Ta = 25C)
CHARACTERISTIC
Reverse Voltage Junction Temperature Storage Temperature Range
SYMBOL
VR Tj Tstg
RATING
15 125 -55 ~ 125
UNIT
V C C
Electrical Characteristics (Ta = 25C)
CHARACTERISTIC
Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance
SYMBOL
VR IR C2V C10V C2V/C10V rs
TEST CONDITION
IR = 1A VR = 15V VR = 2V, f = 1MHz VR = 10V, f = 1MHz - VR = 5V, f = 470MHz
MIN.
15 - 14 5.5 2.0 -
TYP.
- - 15 6 2.5 0.2
MAX.
- 3 16 6.5 - 0.4
UNIT
V nA pF pF -
Marking
TOSHIBA CORPORATION
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1SV257
The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
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TOSHIBA CORPORATION


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